elektronische bauelemente ssg4940nc 8.3a , 40v , r ds(on) 23 m ? dual-n enhancement mode power mosfet 20-feb-2012 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8 saves board space. ? fast switching speed. ? high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones package information package mpq leader size sop-8 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v t a =25c 8.3 continuous drain current 1 t a =70c i d 6.8 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s 3.1 a t a =25c 2.1 power dissipation 1 t a =70c p d 1.3 w operating junction & stor age temperature range t j , t stg -55~150 c thermal resistance rating t Q 10 sec 62.5 c / w maximum junction to ambient 1 steady state r ja 110 c / w notes: 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. g s g s d d d d
elektronische bauelemente ssg4940nc 8.3a , 40v , r ds(on) 23 m ? dual-n enhancement mode power mosfet 20-feb-2012 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v - - 1 a v ds =32v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =32v, v gs =0, t j =55c on-state drain current 1 i d(on) 15 - - a v ds =5v, v gs =10v - - 23 v gs =10v, i d =6.6a drain-source on-resistance 1 r ds(on) - - 30 m ? v gs =4.5v, i d =5.6a forward transconductance 1 g fs - 15 - s v ds =15v, i d =6.6a diode forward voltage v sd - 0.74 - v i s =1.6a, v gs =0 gate resistance r g 1.4 ? f=1.0mhz dynamic 2 input capacitance c iss 1389 output capacitance c oss 169 reverse transfer capacitance c rss 134 pf v ds =15v, v gs =0, f=1mhz total gate charge q g - 13 - gate-source charge q gs - 3.4 - gate-drain charge q gd - 7 - nc i d =6.6a v ds =20v v gs =4.5v turn-on delay time t d(on) - 8 - rise time t r - 10 - turn-off delay time t d(off) - 37 - fall time t f - 16 - ns v ds =20v i d =6.6a v gen =10v r l =3.1 ? r gen =6 ? notes: 1 pulse test pw Q 300 s duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
elektronische bauelemente ssg4940nc 8.3a , 40v , r ds(on) 23 m ? dual-n enhancement mode power mosfet 20-feb-2012 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente ssg4940nc 8.3a , 40v , r ds(on) 23 m ? dual-n enhancement mode power mosfet 20-feb-2012 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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